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 2SA2087
Transistors
Power transistor (-30V, -2A)
2SA2087
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5875 !External dimensions (Unit : mm)
ATV
6.8 2.5
0.65Max.
1.0
0.5 2.54 2.54
0.9
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
1.05
14.5
4.4
0.45
Taping specifications
!Applications Low frequency amplifier High speed switching
Abbreviated symbol : A2087
!Structure PNP Silicon epitaxial planar transistor
!Packaging specifications
Package
Type
Taping
TV2 2500
Code Basic ordering unit (pieces)
2SA2087
!Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits -30 -30 -6 -2 -4 1.0 150 -55 to 150 Unit V V V A A W C C
1 2
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
1 Pw=10ms 2 Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
1/3
2SA2087
Transistors
!Electrical characteristics (Ta=25C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. -30 -30 -6 - - Typ. - - - - - Max. - - - -1.0 -1.0 Unit V V V A A Condition IC= -1mA IC= -100A IE= -100A VCB= -20V VEB= -4V IC= -1.0A IB= -100mA VCE= -2V IC= -100mA VCE= -10V IE=100mA f=10MHz VCB= -10V IE=0mA f=1MHz IC= -2A IB1= -200mA IB2=200mA VCC -25V
Collector-emitter saturation voltage DC current gain
VCE (sat) hFE
- 120 -
-200 -
-500 390 -
mV -
Transition frequency
fT
350
MHz
Corrector output capacitance Turn-on time Storage time Fall time
Non repetitive pulse
Cob Ton Tstg Tf
- - - -
25 25 100 20
- - - -
pF ns ns ns
!hFE RANK
Q 120-270 R 180-390
!Electrical characteristic curves
-10
1000
10ms 1ms 500s
COLLECTOR CURRENT : IC (A)
-1
100ms DC
DC CURRENT GAIN : hFE
SWITCHING TIME : (ns)
Ta=25C VCC= -25V IC / IB=10 / 1
Tstg
1000
VCE= -2V
100 Ta=125C
Ta=25C Ta= -40C
-0.1
100
Tf Ton
10
-0.01
-0.001 -0.1
Single non repetitive Pulsed
-1 -10 -100
10 -0.01
-0.1
-1
-10
1 -0.001
-0.01
-0.1
-1
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs. Collector Current ()
-10
1000
Ta=25C
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
-10
IC / IB=10 / 1
Ta=25C
100
VCE= -5V VCE= -3V VCE= -2V
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
DC CURRENT GAIN : hFE
-1
-1
10
-0.1
Ta=125C Ta=25C Ta= -40C
-0.1
IC / IB=20/1 IC / IB=10/1
1 -0.001
-0.01
-0.1
-1
-10
-0.01 -0.001
-0.01
-0.1
-1
-10
-0.01 -0.001
-0.01
-0.1
-1
-10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs. Collector Current ()
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ()
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ()
2/3
2SA2087
Transistors
-10 -10
1000
-1
-1
Ta=125C Ta=25C Ta= -40C
TRANSITION FREQUENCY : fT (MHz)
IC / IB=10 / 1
COLLECTOR CURRENT : IC (A)
VCE= -2V
BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V)
100
-0.1
Ta=125C Ta=25C Ta= -40C
-0.1
10
Ta=25C
1 VCE= -10V 0.001 0.01 0.1 1 10
-0.01 -0.001
-0.01
-0.1
-1
-10
-0.01
0
-0.5
-1
-1.5
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current
Fig.8 Grounded Emitter Propagation Characteristics
Fig.9 Transition Frequency
100
Ta=25C f=1MHz
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
1 -0.1
-1
-10
-100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!Switching characteristics measurement circuits
RL=12.5 IB1 VIN PW IB2 PW 50s DUTY CYCLE 1% VCC -25V IC
IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM Ton Tstg Tf IC 10%
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0


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